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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.04 Ampere APPLICATION * Low barrier diode for detectors up to GHz frequencies CH740H-40PT FEATURE * Small surface mounting type. (SC-76/SOD-323) * Low VF and low IR * High reliability (1) SC-76/SOD-323 Cathode Band (2) 0.25~0.4 1.15~1.4 CONSTRUCTION * Silicon epitaxial planar 1.6~1.8 MARKING * JC 0.6~1.0 0.1Max. 0.08~0.177 0.25~0.45 2.3~2.7 CIRCUIT (2) (1) o Dimensions in millimeters SC-76/SOD-323 MAXIMUM RATINGES ( At TA = 25 C unless otherwise noted ) RATINGS SYMBOL MIN. Maximum Recurrent Peak Reverse Voltage Maximum Average Forward Rectified Current Total Power Dissipation, TS< 85 oC Typical Series Inductance Typical Case Capacitance Typical Junction Capacitance between Terminal (Note 1) Typical Differential Resistance (Note 2) Operating and Storage Temperature Range VRRM IO PTOT LS CC CJ RO TJ,TSTG -55 CH740H-40PT TYP. 1.8 0.1 0.35 225 MAX. 40 40 150 0.6 +150 Volts mAmps mW nH pF pF k o UNITS C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CH740H-40PT CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF= 2mA Maximum Average Reverse Current at VR= 40V NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts. 2. Measured at 1.0 KHZ and applied reverse voltage of 0 volts. 2. ESD sensitive product handling required. SYMBOL MIN. VF IR TYP. 0.58 MAX. 1.00 10 Volts uAmps 2002-6 UNITS RATING CHARACTERISTIC CURVES ( CH740H-40PT ) Forward current I F = f (VF ) TA = parameter 10 4 Leakage current I R = f (VR) TA = Parameter 10 3 uA uA 10 2 10 3 125C TA = 25C IR TA = 85C TA = 125C TA = -40C 85C IF 10 1 10 2 10 0 25C 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V 2.0 10 -1 0 5 10 15 20 25 30 V 40 VF VR Diode capacitance C J = f (VR) f = 1MHz Rectifier voltage VA = f (VE) f = 900 MHz RL = parameter in 10 4 mV 10 3 0.6 pF 10 2 CJ VA 10 1 10 0 10 -1 10 -2 10 -3 0 10 0.4 0.3 0.2 0.1 0 0 5 10 15 20 V 30 10 1 10 2 10 3 mV 10 4 VR VE |
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